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  Datasheet File OCR Text:
 Composite Transistors
XN4404
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
0.650.15 6 0.95
2.8 -0.3
+0.2 +0.25
1.5 -0.05
0.650.15 1
0.3 -0.05
2.9 -0.05
q q
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
1.90.1
+0.2
5
2
0.95
4
3
q
2SB970 x 2 elements
1.1-0.1
0.40.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25C)
Ratings -15 -10 -7 - 0.5 -1 300 150 -55 to +150 Unit V V V A A mW
1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)
4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin)
Marking Symbol: CV Internal Connection
6 Tr1 1 2 3
C C
5 4
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCB = -10V, IE = 0 VCE = -2V, IC = -500mA* VCE = -2V, IC = -1A* IC = -400mA, IB = -8mA* IC = -400mA, IB = -8mA* VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 100 60 - 0.16 -0.8 130 22 - 0.3 -1.2 V V MHz pF *Pulse measurement min -15 -10 -7 - 0.1 350 typ max Unit V V V A
0 to 0.05
0.1 to 0.3
0.8
0.16-0.06
+0.2
s Basic Part Number of Element
+0.1
1.450.1
s Features
0.5 -0.05
+0.1
+0.1
1
Composite Transistors
PT -- Ta
500
XN4404
IC -- VCE
-1.2 Ta=25C
-100
VBE(sat) -- IC
IC/IB=50
Base to emitter saturation voltage VBE(sat) (V)
Total power dissipation PT (mW)
Collector current IC (A)
400
-1.0
IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA
-30 -10 -3 25C -1 -0.3 -0.1 -0.03 -0.01 -0.01 -0.03 -0.1 -0.3 Ta=-25C 75C
-0.8
300
-0.6
200
-0.4
-3mA -2mA
100
-0.2
-1mA
0 0 40 80 120 160
0 0 -1 -2 -3 -4 -5 -6
-1
-3
-10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
-100
hFE -- IC
IC/IB=50 600 VCE=-2V 200
fT -- I E
VCB=-10V Ta=25C
Collector to emitter saturation voltage VCE(sat) (V)
500
Transition frequency fT (MHz)
-30 -10 -3 -1 Ta=75C -0.3 25C -25C -0.1 -0.03 -0.01 -0.01 -0.03 -0.1 -0.3
Forward current transfer ratio hFE
160
400
Ta=75C 25C
120
300 -25C 200
80
100
40
-1
-3
-10
0 -0.01 -0.03 -0.1 -0.3
0 -1 -3 -10 1 2 3 5 10 20 30 50 100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob -- VCB
80
Collector output capacitance Cob (pF)
70 60 50 40 30 20 10 0 -1
f=1MHz IE=0 Ta=25C
-2 -3 -5
-10
-20 -30 -50 -100
Collector to base voltage VCB (V)
2


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